FDS4885C Description
These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
FDS4885C Key Features
- Q1: N-Channel RDS(on) = 22mΩ @ VGS = 10V RDS(on) = 35mΩ @ VGS = 7V
- Q2: P-Channel RDS(on) = 31mΩ @ VGS = -10V RDS(on) = 42mΩ @ VGS = -4.5V
- Fast switching speed High power and handling capability in a widely used surface mount package 7.5A, 40V
- 6A, -40V