*
  –10 A,
  –20 V. RDS(ON) = 13 mΩ @ VGS =
  –4.5 V RDS(ON) = 17 mΩ @ VGS =
  –2.5 V
* Low gate charge

wtih a wide range of gate drive voltage (2.5V
  – 8V). Applications
* Power management
* Load swit.

This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications wtih a wide range of gate drive voltage (2.5V
  – 8V). Appl.

FDS6570A

FDS6572A

FDS6574A

FDS6576

FDS6064N3

FDS6064N7

FDS6162N3

FDS6162N7

FDS6294

FDS6298

FDS6299S

FDS6375

FDS6609A