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FDS6064N7 N-Channel MOSFET

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Description

FDS6064N7 May 2003 FDS6064N7 20V N-Channel PowerTrench MOSFET General .
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional sw.

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Features

* 23 A, 20 V. RDS(ON) RDS(ON) RDS(ON) = 3.5 mΩ @ VGS = 4.5 V = 4 mΩ @ VGS = 2.5 V = 6 mΩ @ VGS = 1.8 V
* High performance trench technology for extremely low RDS(ON)
* High power and current handling capability
* Fast switching, low gate charge
* FLMP SO-8 pa

Applications

* Synchronous rectifier
* DC/DC converter 5 6 7 8 Bottom-side Drain Contact 4 3 2 1 Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current
* Continuous
* Pulsed Power Dissipation TA=25oC unless otherwise no

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