FDS6614A mosfet equivalent, n-channel mosfet.
9.3 A, 30 V. RDS(on) = 0.018 W @ VGS = 10 V RDS(on) = 0.025 W @ VGS = 4.5 V. Low gate charge (12nC typical). Fast switching speed. High performance trench techn.
where low in-line power loss and fast switching are required.
Features
9.3 A, 30 V. RDS(on) = 0.018 W @ VGS =.
This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suite.
Image gallery
Download