FDS6630A Datasheet - Fairchild Semiconductor

FDS6630A N-Channel MOSFET

This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications.

FDS6630A Features

* 6.5 A, 30 V. RDS(on) = 0.038 Ω @ VGS = 10 V RDS(on) = 0.053 Ω @ VGS = 4.5 V

* Low gate charge (5nC typical). Fast switching speed. High performance trench technology for extremely low RDS(ON). High power and current handling capability. Applications

FDS6630A_FairchildSemiconductor.pdf