FDS6673BZ Datasheet - Fairchild Semiconductor

P-Channel MOSFET

FDS6673BZ Features

* Max rDS(on) = 7.8mΩ, VGS = -10V, ID = -14.5A

* Max rDS(on) = 12mΩ, VGS = -4.5V, ID = -12A

* Extended VGS range (-25V) for battery applications

* HBM ESD protection level of 6.5kV typical (note 3)

* High performance trench technology for extremely low rDS(on)

FDS6673BZ General Description

This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Pac.

FDS6673BZ Datasheet (436.00 KB)

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FDS6673BZ

Manufacturer:

Fairchild Semiconductor

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436.00 KB

Description:

P-channel mosfet.
www.DataSheet.co.kr FDS6673BZ P-Channel PowerTrench® MOSFET January 2006 FDS6673BZ P-Channel PowerTrench® MOSFET -30V, -14.5A, 7.8mΩ General Descri.

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FDS6673BZ P-Channel MOSFET Fairchild Semiconductor

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FDS6673BZ Features

FDS6673BZ General Description

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