FDS6673BZ mosfet equivalent, p-channel mosfet.
* Max rDS(on) = 7.8mΩ, VGS = -10V, ID = -14.5A
* Max rDS(on) = 12mΩ, VGS = -4.5V, ID = -12A
* Extended VGS range (-25V) for battery applications
* HBM ESD.
common in Notebook Computers and Portable Battery Packs.
Features
* Max rDS(on) = 7.8mΩ, VGS = -10V, ID = -14.5A
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