These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
Features
8 A, 20 V. RDS(ON) = 17 mΩ @ VGS = 4.5 V RDS(ON) = 20 mΩ @ VGS = 2.5 V RDS(ON) = 30 mΩ @ VGS = 1.8 V.
Low gate charge (14 nC typical).
High performance trench technology for extremely low RDS(ON).
High power and current handling capability
D2 D
D2 D
DD1 D1 D
5 6
G1 S1 G
Q1
4 3 2
Q2
SO-8
Pin 1 SO-8
7 8
G2 S S2 S S
1
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current.
FDS6894AZ
October 2001
FDS6894AZ
Dual N-Channel Logic Level PWM Optimized PowerTrench® MOSFET
General Description
These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
Features
• 8 A, 20 V. RDS(ON) = 17 mΩ @ VGS = 4.5 V RDS(ON) = 20 mΩ @ VGS = 2.5 V RDS(ON) = 30 mΩ @ VGS = 1.
FDS6894AZ Datasheet
