FDS6930A
Description
Features
5.5 A, 30 V. RDS(ON) = 0.040 Ω @ VGS = 10 V RDS(ON) = 0.055 Ω @ VGS = 4.5 V. Fast switching speed. Low gate charge (typical 5 n C). High performance trench technology for extremely low RDS(ON). High power and current handling capability.
These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor's advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
SOT-23
Super SOTTM-6
Super SOTTM-8
SO-8
SOT-223
SOIC-16
D2 D1 D1 D2
5 6
4 3 2 1
S FD 0A 3 69
G1 S2 G2
7 8
SO-8 pin 1
S1
Absolute Maximum Ratings
Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current
- Continuous
- Pulsed
TA = 25o C unless otherwise noted FDS6930A 30 ±20
(Note 1a)
Units V V A
5.5 20
Power Dissipation...
