FDV303N Datasheet N-Channel Digital FET

Manufacturer: Fairchild (now onsemi)

Datasheet Details

These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

This very high density process is tailored to minimize on-state resistance at low gate drive conditions.

This device is designed especially for application in battery circuits using either one lithium or three cadmium or NMH cells.

FDV303N Digital FET, N-Channel General.

25 V, 0.68 A continuous, 2 A Peak. RDS(ON) = 0.45 Ω @ VGS = 4.5 V RDS(ON) = 0.6 Ω @ VGS= 2.7 V. Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th) < 1V. Gate-Source Zener for ESD ruggedness. >6kV Human Body Model Compact industry standard SOT-23 surface mount pa.

Brand Logo	Part Number	Description	Manufacturer
	FDV303N	N-Channel Digital FET	ON Semiconductor
	FDV303N	N-Channel MOSFET	Kexin
UMW	FDV303N	25V N-ChanneI MOSFET	UMW