Datasheet Details
| Part number | FDW2508PB |
|---|---|
| Manufacturer | Fairchild ↗ Semiconductor |
| File Size | 443.40 KB |
| Description | Dual P-Channel MOSFET |
| Datasheet |
 FDW2508PB_FairchildSemiconductor.pdf
|
| Part number | FDW2508PB |
|---|---|
| Manufacturer | Fairchild ↗ Semiconductor |
| File Size | 443.40 KB |
| Description | Dual P-Channel MOSFET |
| Datasheet |
FDW2508PB_FairchildSemiconductor.pdf
|
This P-Channel 1.8V specified MOSFET uses Fairchild Semiconductor’s advanced low voltage PowerTrench®. Max rDS(on) = 18mΩ at VGS = 4.5V, ID = 6A Max rDS(on) = 22mΩ at VGS = 2.5V, ID = 5A Max rDS(on) = 30mΩ at VGS = 1.8V, ID = 4A Low gate charge High performance trench technology for extremely low rDS(on) Low pr
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