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FDW2512NZ - Dual N-Channel MOSFET

Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.

Features

  • ! 6A, 20V rDS(ON) = 0.028Ω, VGS = 4.5V rDS(ON) = 0.036Ω, VGS = 2.5V ! Extended VGS range (±12 V) for battery.

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FDW2512NZ Dual N-Channel 2.5V Specified PowerTrench® MOSFET December 2004 FDW2512NZ Dual N-Channel 2.5V Specified PowerTrench® MOSFET Features ! 6A, 20V rDS(ON) = 0.028Ω, VGS = 4.5V rDS(ON) = 0.036Ω, VGS = 2.5V ! Extended VGS range (±12 V) for battery applications ! HBM ESD Protection Level of 3.5kV Typical (note 3) ! High performance trench technology for extremely low rDS(ON) ! Low profile TSSOP-8 package General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics applications.
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