FDW258P mosfet equivalent, p-channel 1.8v specified powertrench mosfet.
*
–9 A,
–12 V. RDS(ON) = 11 mΩ @ VGS =
–4.5 V RDS(ON) = 14 mΩ @ VGS =
–2.5 V RDS(ON) = 20 mΩ @ VGS = <.
with a wide range of gate drive voltage (1.8V
– 8V).
Features
*
–9 A,
&nb.
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