FDZ2551N mosfet equivalent, dual n-channel 2.5v specified powertrenchtm bga mosfet.
*= 9 A, 20 V. RDS(ON) = 0.018 Ω=@ VGS = 4.5 V RDS(ON) = 0.030 Ω @ VGS = 2.5 V.
*= Occupies only 0.10 cm2 of PCB area. 1/3 the area of SO-8.
*= Ultra-thin pack.
*= Battery management
*= Load switch
*= Battery protection
D
D S S S
D S
Pin 1
S G
S
G S G
Q2
S S
Q1.
Combining Fairchild’s advanced 2.5V specified PowerTrench process with state of the art BGA packaging, the FDZ2551N minimizes both PCB space and RDS(ON). This dual BGA MOSFET embodies a breakthrough in packaging technology which enables the device to.
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