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FDZ201N - N-Channel 2.5V Specified PowerTrenchTM BGA MOSFET

Description

Combining Fairchild’s advanced 2.5V specified PowerTrench process with state of the art BGA packaging, the FDZ201N minimizes both PCB space and RDS(ON).

Features

  • = 9 A, 20 V. RDS(ON) = 0.018 Ω=@ VGS = 4.5 V RDS(ON) = 0.030 Ω @ VGS = 2.5 V.
  • = Occupies only 5 mm2 of PCB area. Only 55% of the area of SSOT-6.
  • = Ultra-thin package: less than 0.70 mm height when mounted to PCB.
  • = Outstanding thermal transfer characteristics: 4 times better than SSOT-6.
  • = Ultra-low Qg x RDS(ON) figure-of-merit.
  • = High power and current handling capability.

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FDZ201N November 1999 ADVANCE INFORMATION FDZ201N N-Channel 2.5V Specified PowerTrenchTM BGA MOSFET General Description Combining Fairchild’s advanced 2.5V specified PowerTrench process with state of the art BGA packaging, the FDZ201N minimizes both PCB space and RDS(ON). This BGA MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, high current handling capability, ultralow profile packaging, low gate charge, and low RDS(ON). Features •= 9 A, 20 V. RDS(ON) = 0.018 Ω=@ VGS = 4.5 V RDS(ON) = 0.030 Ω @ VGS = 2.5 V. •= Occupies only 5 mm2 of PCB area. Only 55% of the area of SSOT-6 •= Ultra-thin package: less than 0.
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