FDZ2551N Datasheet | Fairchild Semiconductor

Description bining Fairchild’s advanced 2.5V specified Power Trench process with state of the art BGA packaging, the FDZ2551N minimizes both PCB space and RDS(ON). This dual BGA MOSFET embodies a breakthrough in packaging technology which enables the device to bine excellent thermal transfer characteristics, high current handling capability, ultralow profile packaging, low gate charge, and low RDS(ON). Features - = 9 A, 20 V. RDS(ON) = 0.018 Ω=@ VGS = 4.5 V RDS(ON) = 0.030 Ω @ VGS = 2.5 V. - = Occupies only 0.10 cm2 of PCB area. 1/3 the area of SO-8. - = Ultra-thin package: less than 0.70 mm height when mounted to PCB. - = Outstanding thermal transfer characteristics: significantly better than SO-8. - = Ultra-low Qg x RDS(ON) figure-of-merit. - = High power and current handling capability. Applications - = Battery management - = Load switch - = Battery protection Pin 1 Q2 Q1 F2551 Q1 Q2 Pin 1 Bottom Top TA=25o C unless otherwise noted Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, Tstg Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous (Note...