FDZ2554P Datasheet | Fairchild Semiconductor

Description bining Fairchild’s advanced 2.5V specified Power Trench process with state-of-the-art BGA packaging, the FDZ2554P minimizes both PCB space and RDS(ON). This monolithic mon drain BGA MOSFET embodies a breakthrough in packaging technology which enables the device to bine excellent thermal transfer characteristics, high current handling capability, ultra-low profile packaging, low gate charge, and low RDS(ON). Features - - 6.5 A, - 20 V. RDS(ON) = 28 mΩ @ VGS = - 4.5 V RDS(ON) = 45 mΩ @ VGS = - 2.5 V - Occupies only 0.10 cm2 of PCB area: 1/3 the area of SO-8 - Ultra-thin package: less than 0.90 mm height when mounted to PCB - Outstanding thermal transfer characteristics: significantly better than SO-8 - Ultra-low Qg x RDS(ON) figure-of-merit - High power and current handling capability Applications - Battery management - Load switch - Battery protection Pin 1 Q1 Q2 F2554 Q1 Q2 Pin 1 Bottom Top TA=25o C unless otherwise noted Absolute Maximum Ratings VDSS VGSS...