FDZ2554P - Monolithic Common Drain P-Channel 2.5V Specified PowerTrench
Fairchild (now onsemi)
General Description
Combining Fairchild’s advanced 2.5V specified PowerTrench process with state-of-the-art BGA packaging, the FDZ2554P minimizes both PCB space and RDS(ON).
Key Features
6.5 A,.
20 V. RDS(ON) = 28 mΩ @ VGS =.
4.5 V RDS(ON) = 45 mΩ @ VGS =.
2.5 V.
Occupies only 0.10 cm2 of PCB area: 1/3 the area of SO-8.
Ultra-thin package: less than 0.90 mm height when mounted to PCB.
Outstanding thermal transfer characteristics: significantly better than SO-8.
Full PDF Text Transcription for FDZ2554P (Reference)
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FDZ2554P. For precise diagrams, and layout, please refer to the original PDF.
FDZ2554P July 2003 FDZ2554P Monolithic Common Drain P-Channel 2.5V Specified PowerTrench BGA MOSFET General Description Combining Fairchild’s advanced 2.5V specified Powe...
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General Description Combining Fairchild’s advanced 2.5V specified PowerTrench process with state-of-the-art BGA packaging, the FDZ2554P minimizes both PCB space and RDS(ON). This monolithic common drain BGA MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, high current handling capability, ultra-low profile packaging, low gate charge, and low RDS(ON). Features • –6.5 A, –20 V. RDS(ON) = 28 mΩ @ VGS = –4.5 V RDS(ON) = 45 mΩ @ VGS = –2.5 V • Occupies only 0.10 cm2 of PCB area: 1/3 the area of SO-8 • Ultra-thin package: less than 0.
FDZ2554P Datasheet
