Combining Fairchild’s advanced 2.5V specified PowerTrench process with state of the art BGA packaging, the FDZ2552P minimizes both PCB space and RDS(ON).
Key Features
=.
6 A,.
20 V. RDS(ON) = 0.045 Ω @ VGS =.
4.5 V RDS(ON) = 0.075 Ω @ VGS =.
2.5 V.
= Occupies only 0.10 cm2 of PCB area. 1/3 the area of SO-8.
= Ultra-thin package: less than 0.70 mm height when mounted to PCB.
= Outstanding thermal transfer characteristics: significantly better than SO-8.
Full PDF Text Transcription for FDZ2552P (Reference)
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FDZ2552P. For precise diagrams, and layout, please refer to the original PDF.
FDZ2552P November 1999 ADVANCE INFORMATION FDZ2552P Dual P-Channel 2.5V Specified PowerTrenchTM BGA MOSFET General Description Combining Fairchild’s advanced 2.5V specifi...
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MOSFET General Description Combining Fairchild’s advanced 2.5V specified PowerTrench process with state of the art BGA packaging, the FDZ2552P minimizes both PCB space and RDS(ON). This dual BGA MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, high current handling capability, ultralow profile packaging, low gate charge, and low RDS(ON). Features •= –6 A, –20 V. RDS(ON) = 0.045 Ω @ VGS = –4.5 V RDS(ON) = 0.075 Ω @ VGS = –2.5 V. •= Occupies only 0.10 cm2 of PCB area. 1/3 the area of SO-8. •= Ultra-thin package: less than 0.70 mm height whe
FDZ2552P Datasheet
