FDZ201N Datasheet | Fairchild Semiconductor

Description bining Fairchild’s advanced 2.5V specified Power Trench process with state of the art BGA packaging, the FDZ201N minimizes both PCB space and RDS(ON). This BGA MOSFET embodies a breakthrough in packaging technology which enables the device to bine excellent thermal transfer characteristics, high current handling capability, ultralow profile packaging, low gate charge, and low RDS(ON). Features - = 9 A, 20 V. RDS(ON) = 0.018 Ω=@ VGS = 4.5 V RDS(ON) = 0.030 Ω @ VGS = 2.5 V. - = Occupies only 5 mm2 of PCB area. Only 55% of the area of SSOT-6 - = Ultra-thin package: less than 0.70 mm height when mounted to PCB - = Outstanding thermal transfer characteristics: 4 times better than SSOT-6 - = Ultra-low Qg x RDS(ON) figure-of-merit. - = High power and current handling capability. Applications - = Battery management - = Load switch - = Battery protection Pin 1 F201 Pin 1 Bottom Top TA=25o C unless otherwise noted Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, Tstg Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous (Note 1a) - Pulsed Power Dissipation (Steady State) (Note 1a) Operating and Storage Junction Temperature Range Ratings 20 ±12 9 20 2.7 -55 to +175 Units V V A W °C Thermal Characteristics RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 55...