FDZ206P Datasheet | Fairchild Semiconductor

Description bining Fairchild’s advanced 2.5V specified Power Trench process with state of the art BGA packaging, the FDZ206P minimizes both PCB space and RDS(ON). This BGA MOSFET embodies a breakthrough in packaging technology which enables the device to bine excellent thermal transfer characteristics, high current handling capability, ultralow profile packaging, low gate charge, and low RDS(ON). Features - - 13 A, - 20 V. RDS(ON) = 9.5 mΩ @ VGS = - 4.5 V RDS(ON) = 14.5 mΩ @ VGS = - 2.5 V - Occupies only 14 mm2 of PCB area. Only 42% of the area of SO-8 - Ultra-thin package: less than 0.80 mm height when mounted to PCB - 0.65 mm ball pitch - 3.5 x 4 mm2 footprint - High power and current handling capability Applications - Battery management - Load switch - Battery protection D S S S G D S S S S D S S S S D S S S S D D D D D Pin 1 F206P Pin 1 Bottom Top TA=25o C unless otherwise noted Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous (Note 1a) - Pulsed Power Dissipation (Steady State) (Note 1a) Operating and Storage Junction Temperature Range Ratings - 20...