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FDZ202P Datasheet P-channel 2.5v Specified Powertrenchtm Bga MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: FDZ202P November 1999 ADVANCE INFORMATION FDZ202P P-Channel 2.

General Description

bining Fairchild’s advanced 2.5V specified PowerTrench process with state of the art BGA packaging, the FDZ202P minimizes both PCB space and RDS(ON).

This BGA MOSFET embodies a breakthrough in packaging technology which enables the device to bine excellent thermal transfer characteristics, high current handling capability, ultralow profile packaging, low gate charge, and low RDS(ON).

Key Features

  • =.
  • 5.5 A,.
  • 20 V. RDS(ON) = 0.045 Ω=@ VGS =.
  • 4.5 V RDS(ON) = 0.075 Ω @ VGS =.
  • 2.5 V.
  • = Occupies only 5 mm2 of PCB area. Only 55% of the area of SSOT-6.
  • = Ultra-thin package: less than 0.70 mm height when mounted to PCB.
  • = Outstanding thermal transfer characteristics: 4 times better than SSOT-6.
  • = Ultra-low Qg x RDS(ON) figure-of-merit.
  • = High power and current handling capability.

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FDZ202P Distributor