FDZ204P Datasheet | Fairchild Semiconductor

Features - - 4.5 A, - 20 V. RDS(ON) = 45 mΩ @ VGS = - 4.5 V RDS(ON) = 75 mΩ @ VGS = - 2.5 V - Occupies only 4 mm2 of PCB area. Less than 40% of the area of a SSOT-6 - Ultra-thin package: less than 0.80 mm height when mounted to PCB - Ultra-low Qg x RDS(ON) figure-of-merit. - High power and current handling capability. General Description bining Fairchild’s advanced 2.5V specified Power Trench process with state of the art BGA packaging, the FDZ204P minimizes both PCB space and RDS(ON). This BGA MOSFET embodies a breakthrough in packaging technology which enables the device to bine excellent thermal transfer characteristics, high current handling capability, ultralow profile packaging, low gate charge, and low RDS(ON). Applications - Battery management - Load switch - Battery protection P in 1 F204P Bottom Top TA=25o C unless otherwise noted Absolute Maximum Ratings VDSS VGSS ID Symbol PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous (Note 1a) - Pulsed Power Dissipation (Steady State) (Note 1a) Operating and Storage Junction Temperature Range Parameter - 20 ±12 - 4.5 - 20 1.8 - 55 to +150 Ratings Units W °C Thermal Characteristics...