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FDZ203N - N-Channel 2.5V Specified PowerTrench BGA MOSFET

General Description

Combining Fairchild’s advanced 2.5V specified PowerTrench process with state of the art BGA packaging, the FDZ203N minimizes both PCB space and RDS(ON).

Key Features

  • 7.5 A, 20 V. RDS(ON) = 18 mΩ @ VGS = 4.5 RDS(ON) = 30 mΩ @ VGS = 2.5 V.
  • Occupies only 4 mm2 of PCB area. Less than 40% of the area of a SSOT-6.
  • Ultra-thin package: less than 0.80 mm height when mounted to PCB.
  • Ultra-low Qg x RDS(ON) figure-of-merit.
  • High power and current handling capability.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDZ203N March 2003 FDZ203N N-Channel 2.5V Specified PowerTrench® BGA MOSFET General Description Combining Fairchild’s advanced 2.5V specified PowerTrench process with state of the art BGA packaging, the FDZ203N minimizes both PCB space and RDS(ON). This BGA MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, high current handling capability, ultralow profile packaging, low gate charge, and low RDS(ON). Features • 7.5 A, 20 V. RDS(ON) = 18 mΩ @ VGS = 4.5 RDS(ON) = 30 mΩ @ VGS = 2.5 V • Occupies only 4 mm2 of PCB area. Less than 40% of the area of a SSOT-6 • Ultra-thin package: less than 0.80 mm height when mounted to PCB • Ultra-low Qg x RDS(ON) figure-of-merit.