FDZ203N Description
bining Fairchild’s advanced 2.5V specified PowerTrench process with state of the art BGA packaging, the FDZ203N minimizes both PCB space and RDS(ON). This BGA MOSFET embodies a breakthrough in packaging technology which enables the device to bine excellent thermal transfer characteristics, high current handling capability, ultralow profile packaging, low gate charge, and low RDS(ON).
FDZ203N Key Features
- 7.5 A, 20 V. RDS(ON) = 18 mΩ @ VGS = 4.5 RDS(ON) = 30 mΩ @ VGS = 2.5 V
- Occupies only 4 mm2 of PCB area. Less than 40% of the area of a SSOT-6
- Ultra-thin package: less than 0.80 mm height when mounted to PCB
- Ultra-low Qg x RDS(ON) figure-of-merit
- High power and current handling capability