FDZ2553N - Monolithic Common Drain N-Channel 2.5V Specified PowerTrench
Fairchild (now onsemi)
General Description
Combining Fairchild’s advanced 2.5V specified PowerTrench process with state-of-the-art BGA packaging, the FDZ2553N minimizes both PCB space and RDS(ON).
Key Features
9.6 A, 20 V. RDS(ON) = 14 mΩ @ VGS = 4.5 V RDS(ON) = 20 mΩ @ VGS = 2.5 V.
Occupies only 0.10 cm2 of PCB area: 1/3 the area of SO-8.
Ultra-thin package: less than 0.80 mm height when mounted to PCB.
Outstanding thermal transfer characteristics: significantly better than SO-8.
Full PDF Text Transcription for FDZ2553N (Reference)
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FDZ2553N. For precise diagrams, and layout, please refer to the original PDF.
FDZ2553N February 2003 FDZ2553N Monolithic Common Drain N-Channel 2.5V Specified PowerTrench BGA MOSFET General Description Combining Fairchild’s advanced 2.5V specified ...
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FET General Description Combining Fairchild’s advanced 2.5V specified PowerTrench process with state-of-the-art BGA packaging, the FDZ2553N minimizes both PCB space and RDS(ON). This Monolithic Common Drain BGA MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, high current handling capability, ultra-low profile packaging, low gate charge, and low RDS(ON). Features • 9.6 A, 20 V. RDS(ON) = 14 mΩ @ VGS = 4.5 V RDS(ON) = 20 mΩ @ VGS = 2.5 V • Occupies only 0.10 cm2 of PCB area: 1/3 the area of SO-8. • Ultra-thin package: less than 0.80 mm hei
FDZ2553N Datasheet
