FDZ2553N Description
bining Fairchild’s advanced 2.5V specified PowerTrench process with state-of-the-art BGA packaging, the FDZ2553N minimizes both PCB space and RDS(ON). This Monolithic mon Drain BGA MOSFET embodies a breakthrough in packaging technology which enables the device to bine excellent thermal transfer characteristics, high current handling capability, ultra-low profile packaging, low gate charge, and low RDS(ON).
FDZ2553N Key Features
- 9.6 A, 20 V. RDS(ON) = 14 mΩ @ VGS = 4.5 V RDS(ON) = 20 mΩ @ VGS = 2.5 V
- Occupies only 0.10 cm2 of PCB area: 1/3 the area of SO-8
- Ultra-thin package: less than 0.80 mm height when mounted to PCB
- Outstanding thermal transfer characteristics: significantly better than SO-8
- Ultra-low Qg x RDS(ON) figure-of-merit
- High power and current handling capability