FDZ2553N Datasheet | Fairchild Semiconductor

Description bining Fairchild’s advanced 2.5V specified Power Trench process with state-of-the-art BGA packaging, the FDZ2553N minimizes both PCB space and RDS(ON). This Monolithic mon Drain BGA MOSFET embodies a breakthrough in packaging technology which enables the device to bine excellent thermal transfer characteristics, high current handling capability, ultra-low profile packaging, low gate charge, and low RDS(ON). Features - 9.6 A, 20 V. RDS(ON) = 14 mΩ @ VGS = 4.5 V RDS(ON) = 20 mΩ @ VGS = 2.5 V - Occupies only 0.10 cm2 of PCB area: 1/3 the area of SO-8. - Ultra-thin package: less than 0.80 mm height when mounted to PCB. - Outstanding thermal transfer characteristics: significantly better than SO-8. - Ultra-low Qg x RDS(ON) figure-of-merit - High power and current handling capability Applications - Battery management - Load switch - Battery protection Pin 1 Q1 Q2 Q1 Q2 Pin 1 Bottom Top TA=25o C unless otherwise noted Absolute Maximum Ratings VDSS VGSS ID Symbol PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous (Note 1a) - Pulsed Power Dissipation (Steady State) (Note 1a) Operating and Storage Junction Temperature...