Full PDF Text Transcription for FDZ209N (Reference)
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FDZ209N May 2004 FDZ209N 60V N-Channel PowerTrench BGA MOSFET General Description Combining Fairchild’s advanced PowerTrench process with state-of-the-art BGA packaging, ...
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d’s advanced PowerTrench process with state-of-the-art BGA packaging, the FDZ209N minimizes both PCB space and RDS(ON). This BGA MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, high current handling capability, ultra-low profile packaging, low gate charge, and low RDS(ON). Features • 4 A, 60 V. RDS(ON) = 80 mΩ @ VGS = 5 V • Occupies only 5 mm2 of PCB area: only 55% of the area of SSOT-6 • Ultra-thin package: less than 0.
FDZ209N Datasheet
