FDZ209N Description
bining Fairchild’s advanced PowerTrench process with state-of-the-art BGA packaging, the FDZ209N minimizes both PCB space and RDS(ON). This BGA MOSFET embodies a breakthrough in packaging technology which enables the device to bine excellent thermal transfer characteristics, high current handling capability, ultra-low profile packaging, low gate charge, and low RDS(ON).
FDZ209N Key Features
- 4 A, 60 V. RDS(ON) = 80 mΩ @ VGS = 5 V
- Occupies only 5 mm2 of PCB area: only 55% of the area of SSOT-6
- Ultra-thin package: less than 0.80 mm height when mounted to PCB
- Outstanding thermal transfer characteristics: 4 times better than SSOT-6
- Ultra-low Qg x RDS(ON) figure-of-merit
- High power and current handling capability