Full PDF Text Transcription for FDZ208P (Reference)
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FDZ208P. For precise diagrams, and layout, please refer to the original PDF.
FDZ208P January 2003 FDZ208P P-Channel 30 Volt PowerTrench BGA MOSFET Features • –12.5 A, –30 V. RDS(ON) = 10.5 mΩ @ VGS = –10 V RDS(ON) = 16.5 mΩ @ VGS = –4.5 V • Occupi...
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(ON) = 10.5 mΩ @ VGS = –10 V RDS(ON) = 16.5 mΩ @ VGS = –4.5 V • Occupies only 14 mm2 of PCB area. Only 42% of the area of SO-8 • Ultra-thin package: less than 0.80 mm height when mounted to PCB • 3.5 x 4 mm2 footprint • High power and current handling capability General Description Combining Fairchild’s advanced 30 Volt P-Channel Trench II Process with ± 25 Volts Vgs. Abs. Max Gate Rating for the ultimate low Rds Battery Protection MOSFET. This MOSFET also embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, high current handling capability, ultralo
FDZ208P Datasheet
