FDZ208P Datasheet | Fairchild Semiconductor

Features - - 12.5 A, - 30 V. RDS(ON) = 10.5 mΩ @ VGS = - 10 V RDS(ON) = 16.5 mΩ @ VGS = - 4.5 V - Occupies only 14 mm2 of PCB area. Only 42% of the area of SO-8 - Ultra-thin package: less than 0.80 mm height when mounted to PCB - 3.5 x 4 mm2 footprint - High power and current handling capability General Description bining Fairchild’s advanced 30 Volt P-Channel Trench II Process with ± 25 Volts Vgs. Abs. Max Gate Rating for the ultimate low Rds Battery Protection MOSFET. This MOSFET also embodies a breakthrough in packaging technology which enables the device to bine excellent thermal transfer characteristics, high current handling capability, ultralow profile packaging, low gate charge, and low RDS(ON). Applications - Battery management - Load switch - Battery protection D S S S G D S S S S D S S S S D S S S S D D D D D Pin 1 F208P Pin 1 Bottom Top TA=25o C unless otherwise noted Absolute Maximum Ratings VDSS VGSS ID PD TJ, Tstg Symbol Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Power Dissipation (Steady State) Parameter (Note 1a) (Note 1a) (Note 1a) Operating and Storage Junction Temperature Range - 30 ±...