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FDZ493P - P-Channel 2.5V Specified PowerTrench BGA MOSFET

General Description

tm Max rDS(on) = 46mΩ at VGS = 4.5V, ID = 4.6A Max rDS(on) = 72mΩ at VGS = 2.5V, ID = 3.6A

Occupies only 2.25 mm2 of PCB area.

Less than 50% of the area of SSOT-6.

Ultra-thin package: less than 0.80 mm height when mounted

Key Features

  • General.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDZ493P P-Channel 2.5V Specified PowerTrench® BGA MOSFET November 2006 FDZ493P P-Channel 2.5V Specified PowerTrench® BGA MOSFET –20V, –4.6A, 46mΩ Features General Description tm „ Max rDS(on) = 46mΩ at VGS = –4.5V, ID = –4.6A „ Max rDS(on) = 72mΩ at VGS = –2.5V, ID = –3.6A „ Occupies only 2.25 mm2 of PCB area. Less than 50% of the area of SSOT-6. „ Ultra-thin package: less than 0.80 mm height when mounted to PCB. „ Outstanding thermal transfer characteristics:4 times better than SSOT-6. „ Ultra-low Qg x rDS(on) figure-of-merit. „ RoHS Compliant. Combining Fairchild's advanced 2.5V specified PowerTrench® process with state of the art BGA packaging process, the FDZ493P minimizes both PCB space and rDS(on).