FDZ4670S Datasheet | Fairchild Semiconductor

Features - Max r DS(on) = 2.4mΩ at VGS = 10V, ID = 25A - Max r DS(on) = 4.0mΩ at VGS = 4.5V, ID = 19A - Ultra-thin package: less than 0.85mm height when mounted to - Outstanding thermal transfer characteristics - Ultra-low gate charge x r DS(on) product - Ro HS pliant General Description bining Fairchild's 30V Power Trench® process with state-of-the-art BGA packaging, the FDZ4670S minimizes both PCB space and r DS(on). This BGA MOSFET embodies a breakthrough in packaging technology which enables the device to bine excellent thermal transfer characteristics, high current handling capacity, ultra-low profile packaging, low gate charge and low r DS(on) incorporating Sync FET technology. This device has the added benefit of an efficient monolithic Schottky body diode to reduce Trr and diode forward voltage. This MOSFET feature faster switching and lower gate charge than other MOSFETs with parable r DS(on) specifications resulting in DC/DC power supply designs and POL converters with higher overall efficiency. Applications - DC - DC Conversion - POL converters Index slot Bottom FLFBGA 3.5X4.0 Top MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed TA = 25°C Power Dissipation TA = 25°C Power Dissipation TA = 25°C Operating and Storage Junction Temperature Range Thermal Characteristics (Note 1a) (Note 1a) (Note 1b) Ratings 30 ±20 25 107 2.5 1.25 -55 to +150 Units V V...