FDZ493P Datasheet | Fairchild Semiconductor

Features General Description tm - Max r DS(on) = 46mΩ at VGS = - 4.5V, ID = - 4.6A - Max r DS(on) = 72mΩ at VGS = - 2.5V, ID = - 3.6A - Occupies only 2.25 mm2 of PCB area. Less than 50% of the area of SSOT-6. - Ultra-thin package: less than 0.80 mm height when mounted to PCB. - Outstanding thermal transfer characteristics:4 times better than SSOT-6. - Ultra-low Qg x r DS(on) figure-of-merit. - Ro HS pliant. bining Fairchild's advanced 2.5V specified Power Trench® process with state of the art BGA packaging process, the FDZ493P minimizes both PCB space and r DS(on). This BGA MOSFET embodies a breakthrough in packaging technology which enables the device to bine excellent thermal transfer characteristics, high current handing capability,ultra-low profile packaging, low gate charge, and low r DS(on). Application - Battery management - Load switch - Battery protection GATE .. BOTTOM MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Power Dissipation TA = 25°C (Note 1a) Operating and Storage Junction Temperature Range TA = 25°C (Note 1a) Ratings - 20 ±12 - 4.6 - 10 1.7 - 55 to +150 Units V V A W °C Thermal Characteristics RθJA Thermal Resistance, Junction to Ambient (Note 1a) 72 °C/W Package Marking and Ordering Information Device Marking E Device FDZ493P Reel Size 7’’ Tape Width 8mm Quantity 3000 units ©2006 Fairchild Semiconductor Corporation FDZ493P Rev.B(W) .fairchildsemi. FDZ493P P-Channel 2.5V Specified Power Trench® BGA MOSFET Electrical Characteristics TA = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max...