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FDZ1323NZ - MOSFET

General Description

This device is designed specifically as a single package solution for Li-Ion battery pack protection circuit and other ultra-portable applications.

Key Features

  • Max rS1S2(on) = 13 mΩ at VGS = 4.5 V, IS1S2 = 1 A.
  • Max rS1S2(on) = 13 mΩ at VGS = 3.8 V, IS1S2 = 1 A.
  • Max rS1S2(on) = 16 mΩ at VGS = 3.1 V, IS1S2 = 1 A.
  • Max rS1S2(on) = 18 mΩ at VGS = 2.5 V, IS1S2 = 1 A.
  • Occupies only 3 mm2 of PCB area.
  • Ultra-thin package: less than 0.35 mm height when mounted to PCB.
  • High power and current handling capability.
  • HBM ESD protection level > 3.6 kV (Note 3).
  • RoHS Compliant General Des.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDZ1323NZ Common Drain N-Channel 2.5 V PowerTrench® WL-CSP MOSFET September 2014 FDZ1323NZ Common Drain N-Channel 2.5 V PowerTrench® WL-CSP MOSFET 20 V, 10 A, 13 mΩ Features „ Max rS1S2(on) = 13 mΩ at VGS = 4.5 V, IS1S2 = 1 A „ Max rS1S2(on) = 13 mΩ at VGS = 3.8 V, IS1S2 = 1 A „ Max rS1S2(on) = 16 mΩ at VGS = 3.1 V, IS1S2 = 1 A „ Max rS1S2(on) = 18 mΩ at VGS = 2.5 V, IS1S2 = 1 A „ Occupies only 3 mm2 of PCB area „ Ultra-thin package: less than 0.35 mm height when mounted to PCB „ High power and current handling capability „ HBM ESD protection level > 3.6 kV (Note 3) „ RoHS Compliant General Description This device is designed specifically as a single package solution for Li-Ion battery pack protection circuit and other ultra-portable applications.