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FDZ192NZ - N-Channel 1.5 V Specified PowerTrench Thin WL-CSP MOSFET

General Description

Designed on Fairchild's advanced 1.5 V PowerTrench® process with state of the art "fine pitch" WLCSP packaging process, the FDZ192NZ minimizes both PCB space and rDS(on).

Key Features

  • Max rDS(on) = 39 mΩ at VGS = 4.5 V, ID = 2.0 A.
  • Max rDS(on) = 43 mΩ at VGS = 2.5 V, ID = 2.0 A.
  • Max rDS(on) = 49 mΩ at VGS = 1.8 V, ID = 1.0 A.
  • Max rDS(on) = 55 mΩ at VGS = 1.5 V, ID = 1.0 A.
  • Occupies only 1.5 mm2 of PCB area. Less than 50% of the area of 2 x 2 BGA.
  • Ultra-thin package: less than 0.65 mm height when mounted to PCB.
  • HBM ESD protection level > 2200V (Note3).
  • RoHS Compliant General.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDZ192NZ N-Channel 1.5 V Specified PowerTrench® Thin WL-CSP MOSFET January 2010 FDZ192NZ N-Channel 1.5 V Specified PowerTrench® Thin WL-CSP MOSFET 20 V, 5.3 A, 39 mΩ Features „ Max rDS(on) = 39 mΩ at VGS = 4.5 V, ID = 2.0 A „ Max rDS(on) = 43 mΩ at VGS = 2.5 V, ID = 2.0 A „ Max rDS(on) = 49 mΩ at VGS = 1.8 V, ID = 1.0 A „ Max rDS(on) = 55 mΩ at VGS = 1.5 V, ID = 1.0 A „ Occupies only 1.5 mm2 of PCB area.Less than 50% of the area of 2 x 2 BGA „ Ultra-thin package: less than 0.65 mm height when mounted to PCB „ HBM ESD protection level > 2200V (Note3) „ RoHS Compliant General Description Designed on Fairchild's advanced 1.5 V PowerTrench® process with state of the art "fine pitch" WLCSP packaging process, the FDZ192NZ minimizes both PCB space and rDS(on).