FDZ192NZ Description
Designed on Fairchild's advanced 1.5 V PowerTrench® process with state of the art "fine pitch" WLCSP packaging process, the FDZ192NZ minimizes both PCB space and rDS(on). This advanced WLCSP MOSFET embodies a breakthrough in packaging technology which enables the device to bine excellent thermal transfer characteristics, ultra-low profile packaging, low gate charge, and low rDS(on).
FDZ192NZ Key Features
- Max rDS(on) = 39 mΩ at VGS = 4.5 V, ID = 2.0 A
- Max rDS(on) = 43 mΩ at VGS = 2.5 V, ID = 2.0 A
- Max rDS(on) = 49 mΩ at VGS = 1.8 V, ID = 1.0 A
- Max rDS(on) = 55 mΩ at VGS = 1.5 V, ID = 1.0 A
- Occupies only 1.5 mm2 of PCB area.Less than 50% of the
- Ultra-thin package: less than 0.65 mm height when mounted to PCB
- HBM ESD protection level > 2200V (Note3)
- RoHS pliant