Datasheet Details
| Part number | FDZ197PZ |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 332.61 KB |
| Description | -20V P-Channel 1.5V Specified PowerTrench Thin WL-CSP MOSFET |
| Datasheet | FDZ197PZ_FairchildSemiconductor.pdf |
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Overview: FDZ197PZ P-Channel 1.5 V Specified PowerTrench® Thin WL-CSP MOSFET .. June 2009 FDZ197PZ P-Channel 1.5 V Specified PowerTrench® Thin WL-CSP MOSFET -20 V, -3.
| Part number | FDZ197PZ |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 332.61 KB |
| Description | -20V P-Channel 1.5V Specified PowerTrench Thin WL-CSP MOSFET |
| Datasheet | FDZ197PZ_FairchildSemiconductor.pdf |
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|
|
Designed on Fairchild's advanced 1.5 V PowerTrench® process with state of the art "fine pitch" WLCSP packaging process, the FDZ197PZ minimizes both PCB space and rDS(on).
This advanced WLCSP MOSFET embodies a breakthrough in packaging technology which enables the device to bine excellent thermal transfer characteristics, ultra-low profile packaging, low gate charge, and low rDS(on).
Applications Battery management Load switch Battery protection PIN1 S S D D S G TOP WL-CSP 1x1.5 Thin BOTTOM MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage -Continuous -Pulsed Power Dissipation Power Dissipation TA = 25°C TA = 25°C (Note 1a) (Note 1b) TA = 25°C (Note 1a) Ratings -20 ±8 -3.8 -15 1.9 0.9 -55 to +150 Units V V A W °C Operating and Storage Junction Temperature Range Thermal Characteristics RθJA RθJA Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient (Note 1a) (Note 1b) 65 133 °C/W Package Marking and Ordering Information Device Marking 7 Device FDZ197PZ Package WL-CSP 1x1.5 Thin Reel Size 7” Tape Width 8 mm Quantity 5000 units ©2009 Fairchild Semiconductor Corporation FDZ197PZ Rev.C1 1 .fairchildsemi.
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