FDZ197PZ Description
Designed on Fairchild's advanced 1.5 V PowerTrench® process with state of the art "fine pitch" WLCSP packaging process, the FDZ197PZ minimizes both PCB space and rDS(on). This advanced WLCSP MOSFET embodies a breakthrough in packaging technology which enables the device to bine excellent thermal transfer characteristics, ultra-low profile packaging, low gate charge, and low rDS(on). FDZ197PZ P-Channel 1.5 V...
FDZ197PZ Key Features
- Max rDS(on) = 64 mΩ at VGS = -4.5 V, ID = -2.0 A
- Max rDS(on) = 71 mΩ at VGS = -2.5 V, ID = -2.0 A
- Max rDS(on) = 79 mΩ at VGS = -1.8 V, ID = -1.0 A
- Max rDS(on) = 95 mΩ at VGS = -1.5 V, ID = -1.0 A
- Occupies only 1.5 mm2 of PCB area.Less than 50% of the area of 2 x 2 BGA
- Ultra-thin package: less than 0.65 mm height when mounted to PCB
- HBM ESD protection level > 4400V (Note3)
- RoHS pliant