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FDZ193P Datasheet P-channel 1.7v Powertrench Wl-csp MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: P-Channel 1.7V PowerTrench® WL-CSP MOSFET December 2006 FDZ193P P-Channel 1.

General Description

„ Max rDS(on) = 90mΩ at VGS = -4.5V, ID = -1A „ Max rDS(on) = 130mΩ at VGS = -2.5V, ID = -1A „ Max rDS(on) = 300mΩ at VGS = -1.7V, ID = -1A „ Occupies only 1.5 mm2 of PCB area Less than 50% of the area of 2 x 2 BGA „ Ultra-thin package: less than 0.65 mm height when mounted to PCB „ RoHS pliant tm Designed on Fairchild's advanced 1.7V PowerTrench® process with state of the art "low pitch" WLCSP packaging process, the FDZ193P minimizes both PCB space and rDS(on).

This advanced WLCSP MOSFET embodies a breakthrough in packaging technology which enables the device to bine excellent thermal transfer characteristics, ultra-low profile packaging, low gate charge, and low rDS(on).

Application „ Battery management „ Load switch „ Battery protection PIN 1 S S D D S G PIN 1 S G ..

Key Features

  • General.

FDZ193P Distributor