FDZ193P Datasheet | Fairchild Semiconductor

P-Channel 1.7V PowerTrench® WL-CSP MOSFET December 2006 FDZ193P P-Channel 1.7V PowerTrench® WL-CSP MOSFET -20V, -1A, 90mΩ Features General Description - Max rDS(on) = 90mΩ at VGS = -4.5V, ID = -1A - Max rDS(on) = 130mΩ at VGS = -2.5V, ID = -1A - Max rDS(on) = 300mΩ at VGS = -1.7V, ID = -1A - Occupies only 1.5 mm2 of PCB area Less than 50% of the area of 2 x 2 BGA - Ultra-thin package: less than 0.65 mm height when mounted to PCB - RoHS pliant tm Designed on Fairchild's advanced 1.7V PowerTrench® process with state of the art "low pitch" WLCSP packaging process, the FDZ193P minimizes both PCB space and rDS(on). This advanced WLCSP MOSFET embodies a breakthrough in packaging...