FDZ4670 Datasheet | Fairchild Semiconductor

Features - Max r DS(on) = 2.5mΩ at VGS = 10V, ID = 25A - Max r DS(on) = 4.5mΩ at VGS = 4.5V, ID = 18.5A - Ultra-thin package: less than 0.85mm height when mounted to - Outstanding thermal transfer characteristics - Ultra-low gate charge x r DS(on) product - Ro HS pliant General Description bining Farichild’s 30V Power Trench process with state-ofthe-art BGA packaging, the FDZ4670 minimize both PCB space and r DS(on) . This BGA MOSFET embodies a breakthrough in packaging technology which enables the device to bine excellent thermal transfer characteristics, high current handing capacity, ultra-low profile packaging, low gate charge and low r DS(on). This MOSFET feature faster switching and lower gate charge than other MOSFETs with parable r DS(on) specifications resulting in DC/DC power supply designs and POL converters with higher overall efficiency. Applications - DC - DC Conversion - POL converters Index slot Bottom Top FLFBGA 3.5X4.0 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Power Dissipation Power Dissipation Operating and Storage Junction Temperature Range Thermal Characteristics (Note 1a) (Note 1a) (Note 1b) Ratings 30 ±20 25 60 2.5 1.25 -55 to +150 Units V V A W °C RθJA RθJA RθJC Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Package Marking and Ordering Information (Note 1a) (Note 1b) 50 100 0.85 °C/W Device Marking...