FGD3N60LSD Key Features
- High Current Capability
- Very Low Saturation Voltage : VCE(sat) = 1.2 V @ IC = 3A
- High Input Impedance
- Part: FGD3N60LSD
- Manufacturer: Fairchild (official site)
- Size: 761.90 KB
Other FGD3N60LSD Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
onsemi |
FGD3N60LSD | IGBT |
FGD3N60LSD Description
Fairchild's Insulated Gate Bipolar Transistors (IGBTs) provide very low conduction losses. The device is designed for applications where very low On-Voltage Drop is a required.