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Fairchild Semiconductor Electronic Components Datasheet

FJN3309R Datasheet

NPN Epitaxial Silicon Transistor

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FJN3309R
Switching Application (Bias Resistor Built In)
• Switching circuit, Inverter, Interface circuit, Driver Circuit
• Built in bias Resistor (R=4.7K)
• Complement to FJN4309R
1 TO-92
1. Emitter 2. Collector 3. Base
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
Parameter
Value
Units
VCBO
VCEO
VEBO
IC
PC
TJ
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
40
40
5
100
300
150
-55 ~ 150
V
V
V
mA
mW
°C
°C
Equivalent Circuit
C
R
B
E
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCBO
BVCEO
ICBO
hFE
VCE (sat)
Cob
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Output Capacitance
IC=100µA, IE=0
IE=1mA, IB=0
VCB=30V, IE=0
VCE=5V, IC=1mA
IC=10mA, IB=1mA
VCB=10V, IE=0
f=1MHz
fT
Current Gain Bandwidth Product
VCE=10V, IC=5mA
R Input Resistor
Min.
40
40
100
3.2
Typ.
3.70
250
4.7
Max.
0.1
600
0.3
Units
V
V
µA
V
pF
MHz
6.2 K
©2002 Fairchild Semiconductor Corporation
Rev. A, August 2002


Fairchild Semiconductor Electronic Components Datasheet

FJN3309R Datasheet

NPN Epitaxial Silicon Transistor

No Preview Available !

Typical Characteristics
10000
1000
V = 5V
CE
R = 4.7K
100
10
0.1 1 10
I [mA], COLLECTOR CURRENT
C
Figure 1. DC current Gain
100
400
350
300
250
200
150
100
50
0
0
25 50 75 100 125 150
T [oC], AMBIENT TEMPERATURE
a
175
Figure 3. Power Derating
1000
100
IC = 10IB
R = 4.7K
10
1
1 10 100
IC[mA], COLLECTOR CURRENT
Figure 2. Collector-Emitter Saturation Voltage
©2002 Fairchild Semiconductor Corporation
Rev. A, August 2002


Part Number FJN3309R
Description NPN Epitaxial Silicon Transistor
Maker Fairchild Semiconductor
Total Page 4 Pages
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