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Fairchild Semiconductor Electronic Components Datasheet

FJN4303R Datasheet

PNP Epitaxial Silicon Transistor

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FJN4303R
Switching Application (Bias Resistor Built In)
• Switching circuit, Inverter, Interface circuit, Driver Circuit
• Built in bias Resistor (R1=22K, R2=22K)
• Complement to FJN3303R
1 TO-92
1. Emitter 2. Collector 3. Base
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
Parameter
Value
Units
VCBO
VCEO
VEBO
IC
PC
TJ
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
-50
-50
-10
-100
300
150
-55 ~ 150
V
V
V
mA
mW
°C
°C
Equivalent Circuit
R1
B
R2
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCBO
BVCEO
ICBO
hFE
VCE(sat)
fT
Cob
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
IC= -10µA, IE=0
IC= -100µA, IB=0
VCB= -40V, IE=0
VCE= -5V, IC= -5mA
IC= -10mA, IB= -0.5mA
VCE= -10V, IC= -5mA
VCB= -10V, IE=0
f=1.0MHz
VI(off)
VI(on)
R1
R1/R2
Input Off Voltage
Input On Voltage
Input Resistor
Resistor Ratio
VCE= -5V, IC= -100µA
VCE= -0.3V, IC= -5mA
Min.
-50
-50
56
-0.5
15
0.9
Typ.
200
5.5
22
1
Max.
-0.1
-0.3
-3.0
29
1.1
C
E
Units
V
V
µA
V
MHz
pF
V
V
K
©2002 Fairchild Semiconductor Corporation
Rev. A, July 2002


Fairchild Semiconductor Electronic Components Datasheet

FJN4303R Datasheet

PNP Epitaxial Silicon Transistor

No Preview Available !

Typical Characteristics
-1000
-100
VCE = - 5V
R1 = 22K
R2 = 22K
-100
-10
VCE = - 0.3V
R1 = 22 K
R2 = 22 K
-10
-1
-10 -100
IC[mA], COLLECTOR CURRENT
Figure 1. DC current Gain
-1000
-1000
V = - 5V
CE
R1 = 22K
R2 = 22K
-100
-10
-0.0
-0.4 -0.8 -1.2 -1.6 -2.0
VI(off)[V], INPUT OFF VOLTAGE
Figure 3. Input Off Voltage
-2.4
-1
-0.1 -1 -10
IC[mA], COLLECTOR CURRENT
Figure 2. Input On Voltage
-100
350
300
250
200
150
100
50
0
0 25 50 75 100 125 150 175
Ta[oC], AMBIENT TEMPERATURE
Figure 4. Power Derating
©2002 Fairchild Semiconductor Corporation
Rev. A, July 2002


Part Number FJN4303R
Description PNP Epitaxial Silicon Transistor
Maker Fairchild Semiconductor
Total Page 4 Pages
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