FQA70N15 Datasheet - Fairchild Semiconductor

N-Channel Power MOSFET

FQA70N15 Features

* 70 A, 100 V, RDS(on) = 28 mΩ (Max)@VGS = 10 V, ID = 35 A

* Low Gate Charge (Typ. 135 nC)

* Low Crss (Typ.135 pF)

* 100% Avalanche Tested

* 175°C Maximum Junction Temperature Rating D G DS TO-3PN G S Absolute Maximum Ratings TC = 25°C unless otherwise no

FQA70N15 General Description

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy .

FQA70N15 Datasheet (2.75 MB)

FQA70N15 Datasheet Preview — Preview of FQA70N15 PDF

Datasheet Details

Part number:

FQA70N15

Manufacturer:

Fairchild Semiconductor

File Size:

2.75 MB

Description:

N-channel power mosfet.

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FQA70N15 N-Channel Power MOSFET Fairchild Semiconductor

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FQA70N15 Features

FQA70N15 General Description

Datasheet Details

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Description:

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