FQA8N80C Key Features
- 8.4A, 800V, RDS(on) = 1.55Ω @VGS = 10 V Low gate charge ( typical 35 nC) Low Crss ( typical 13pF) Fast switching 100% av
- Part: FQA8N80C
- Manufacturer: Fairchild (official site)
- Size: 789.66 KB
Related Fairchild Datasheets
| Part Number | Description |
|---|---|
| FQA8N80C_F109 | MOSFET |
| FQA8N80 | 800V N-Channel MOSFET |
| FQA8N100C | MOSFET |
| FQA8N90C | 900V N-Channel MOSFET |
| FQA8N90C_F109 | N-Channel QFET MOSFET |
FQA8N80C Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficient switched mode power supplies,...