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* 16.5A, 80V, RDS(on) = 0.1Ω @VGS = 10 V Low gate charge ( typical 8.8 nC) Low Crss ( typical 29 pF) Fast switching 100% ava.

such as automotive, high efficiency switching for DC/DC converters, and DC motor control. D TM Features
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These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching pe.

FQB17N08

FQB17P06

FQB17P10

FQB10N20

FQB10N20C

FQB10N20L

FQB10N50CF

FQB10N60C

FQB11N40

FQB11N40C

FQB11P06

FQB12N20

FQB12N20L