FQB34P10 Key Features
- 33.5 A, -100 V, RDS(on) = 60 mΩ (Max.) @ VGS = .10 V, ID = -16.75 A
- Low Gate Charge (Typ. 85 nC)
- Low Crss (Typ. 170 pF)
- 100% Avalanche Tested
- 175°C Maximum Junction Temperature Rating
- Part: FQB34P10
- Description: MOSFET
- Manufacturer: Fairchild Semiconductor
- Size: 1.83 MB
Related Fairchild Semiconductor Datasheets
| Part Number | Description |
|---|---|
| FQB34P10TM_F085 | 100V P-Channel MOSFET |
| FQB34N20 | 200V N-Channel MOSFET |
| FQB34N20L | 200V N-Channel MOSFET |
| FQB30N06 | 60V N-Channel MOSFET |
| FQB30N06L | 60V LOGIC N-Channel MOSFET |