FQB34P10 - MOSFET

Fairchild Semiconductor

Datasheet Details

Part number	FQB34P10
Manufacturer	Fairchild Semiconductor
File Size	1.83 MB
Description	MOSFET
Datasheet	FQB34P10-FairchildSemiconductor.pdf

This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

-33.5 A, -100 V, RDS(on) = 60 mΩ (Max. ) @ VGS = .10 V, ID = -16.75 A.
Low Gate Charge (Typ. 85 nC).
Low Crss (Typ. 170 pF).
100% Avalanche Tested.
175°C Maximum Junction Temperature Rating S G S D D2-PAK G D Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous (TC =.

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Published: Jan 13, 2017 |