FQB34P10TM_F085 Overview
These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for low voltage applications such as audio amplifier,...
FQB34P10TM_F085 Key Features
- 33.5A, -100V, RDS(on) = 0.06Ω @VGS = -10 V
- Low gate charge ( typical 85 nC)
- Low Crss ( typical 170 pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
- 175°C maximum junction temperature rating
- Qualified to AEC Q101
- RoHS pliant