FQB34P10TM_F085 Datasheet | Fairchild Semiconductor

FQB34P10TM_F085 100V P-Channel MOSFET 100V P-Channel MOSFET March 2012 QFET TM General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control. Features - -33.5A, -100V, RDS(on) = 0.06Ω @VGS = -10 V - Low gate charge ( typical 85 n C) - Low Crss ( typical 170 p F) - Fast switching - 100% avalanche tested - Improved dv/dt capability - 175°C maximum junction temperature rating - Qualified to AEC Q101 - Ro HS pliant D G! D2-PAK FQB...