Description
This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.
Features
- -33.5 A, -100 V, RDS(on) = 60 mΩ (Max. ) @ VGS = .10 V, ID = -16.75 A.
- Low Gate Charge (Typ. 85 nC).
- Low Crss (Typ. 170 pF).
- 100% Avalanche Tested.
- 175°C Maximum Junction Temperature Rating
S
G S
D
D2-PAK
G
D
Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol VDSS ID
IDM VGSS EAS IAR EAR dv/dt PD
TJ, TSTG TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC =.
FQB34P10 Datasheet
