FQB34P10 Datasheet MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: FQB34P10 — P-Channel QFET® MOSFET FQB34P10 P-Channel QFET® MOSFET 100 V, -33.

Datasheet Details

Part number	FQB34P10
Manufacturer	Fairchild (now onsemi)
File Size	1.83 MB
Description	MOSFET
Datasheet	FQB34P10-FairchildSemiconductor.pdf

General Description

This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength.

These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.

Key Features

-33.5 A, -100 V, RDS(on) = 60 mΩ (Max. ) @ VGS = .10 V, ID = -16.75 A.
Low Gate Charge (Typ. 85 nC).
Low Crss (Typ. 170 pF).
100% Avalanche Tested.
175°C Maximum Junction Temperature Rating S G S D D2-PAK G D Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous (TC =.

FQB34P10 Distributor

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