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* 3.0A, 800V, RDS(on) = 5.0Ω @VGS = 10 V Low gate charge ( typical 15 nC) Low Crss ( typical 7.0 pF) Fast switching 100% avalanche teste.

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switch.

FQB3N25

FQB3N30

FQB3N40

FQB3N60

FQB3N60C

FQB3N90

FQB30N06

FQB30N06L

FQB33N10

FQB33N10L

FQB34N20

FQB34N20L

FQB34P10