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* 55A, 60V, RDS(on) = 0.020Ω @VGS = 10 V Low gate charge ( typical 35 nC) Low Crss ( typical 85 pF) Fast switching 100% avalanche .

such as automotive, DC/ DC converters, and high efficiency switching for power management in portable and battery operat.

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switch.

FQB55N10

FQB50N06

FQB50N06L

FQB58N08

FQB5N15

FQB5N20

FQB5N20L

FQB5N30

FQB5N40

FQB5N50

FQB5N50C

FQB5N50CF

FQB5N60