FQB55N10 datasheet, mosfet equivalent, Fairchild Semiconductor

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FQB55N10 Features and benefits

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* 55A, 100V, RDS(on) = 0.026Ω @VGS = 10 V Low gate charge ( typical 75 nC) Low Crss ( typical 130 pF) Fast switching 100% avalanch.

FQB55N10 Application

such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control. D TM Features
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FQB55N10 Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switch.

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