FQB7N10 - 100V N-Channel MOSFET

Product Overview

Fairchild Semiconductor

Part number	FQB7N10
Manufacturer	Fairchild Semiconductor
File Size	548.34 KB
Description	100V N-Channel MOSFET
Datasheet	FQB7N10 Datasheet
Additional preview pages of the FQB7N10 datasheet.

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

7.3A, 100V, RDS(on) = 0.35Ω @VGS = 10 V Low gate charge ( typical 5.8 nC) Low Crss ( typical 10 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D ! " G S G! ! " " " D2-PAK FQB Series G D S I2-PAK FQI Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous.

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Published: Apr 1, 2005 |