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FQD13N06L Datasheet - Fairchild Semiconductor

N-Channel QFET MOSFET

FQD13N06L Features

* 11A, 60V, RDS(on) = 0.115Ω @VGS = 10 V Low gate charge ( typical 4.8 nC) Low Crss ( typical 17 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D D ! " G! G S ! " " "

FQD13N06L General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse i.

FQD13N06L Datasheet (1.50 MB)

Preview of FQD13N06L PDF

Datasheet Details

Part number:

FQD13N06L

Manufacturer:

Fairchild Semiconductor

File Size:

1.50 MB

Description:

N-channel qfet mosfet.

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FQD13N06L N-Channel QFET MOSFET Fairchild Semiconductor

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