FQD13N06L Key Features
- 11A, 60V, RDS(on) = 0.115Ω @VGS = 10 V Low gate charge ( typical 4.8 nC) Low Crss ( typical 17 pF) Fast switching 100% a
- Part: FQD13N06L
- Manufacturer: Fairchild (official site)
- Size: 1.50 MB
Related Fairchild Datasheets
| Part Number | Description |
|---|---|
| FQD13N06 | 60V N-Channel MOSFET |
| FQD13N06TM | 60V N-Channel MOSFET |
| FQD13N10 | 100V N-Channel MOSFET |
| FQD13N10L | 100V LOGIC N-Channel MOSFET |
| FQD10N20 | 200V LOGIC N-Channel MOSFET |
FQD13N06L Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for low voltage applications such as automotive, DC/...