FQD1N60C Key Features
- 1 A, 600 V, RDS(on) = 11.5 Ω (Max.) @ VGS = 10 V, ID = 0.5 A
- Low Gate Charge (Typ. 4.8 nC)
- Low Crss (Typ. 3.5 pF)
- 100% Avalanche Tested
- RoHS pliant
- Part: FQD1N60C
- Description: 600V N-Channel MOSFET
- Manufacturer: Fairchild Semiconductor
- Size: 797.89 KB
Other FQD1N60C Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
HAOHAI |
FQD1N60C | N-Channel MOSFET |
onsemi |
FQD1N60C | N-Channel MOSFET |
| OuCan OuCan |
FQD1N60 | 1.3A N-Channel MOSFET |