FQD1N60C
Description
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength.
Key Features
- 1 A, 600 V, RDS(on) = 11.5 Ω (Max.) @ VGS = 10 V, ID = 0.5 A
- Low Gate Charge (Typ. 4.8 nC)
- Low Crss (Typ. 3.5 pF)
- 100% Avalanche Tested
- RoHS Compliant
- G S D-PAK G
- S I-PAK G! D !
