FQD1N60C Datasheet 600V N-Channel MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: FQD1N60C / FQU1N60C N-Channel QFET® MOSFET April 2013 FQD1N60C / FQU1N60C N-Channel QFET® MOSFET 600 V, 1.0 A, 11.

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FQD1N60C 600v n-channel mosfet by Fairchild (now onsemi) - Datasheet Preview

Datasheet Details

Part number	FQD1N60C
Manufacturer	Fairchild (now onsemi)
File Size	797.89 KB
Description	600V N-Channel MOSFET
Download	FQD1N60C Download (PDF)

General Description

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology.

This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength.

These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

Key Features

1 A, 600 V, RDS(on) = 11.5 Ω (Max. ) @ VGS = 10 V, ID = 0.5 A.
Low Gate Charge (Typ. 4.8 nC).
Low Crss (Typ. 3.5 pF).
100% Avalanche Tested.
RoHS Compliant D G S D-PAK G D S I-PAK G! D !.
◀▲.
! S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulse.

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