Datasheet Summary
April 2004
N-Channel Logic Level MOSFETs 30V, 30A, 0.023 Ω
General Description
This device employs advanced MOSFET technology and Features low gate charge while maintaining low onresistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies.
Features
- Fast switching
- r DS(ON) = 0.014 Ω (Typ), V GS = 10V
- r DS(ON) = 0.024 Ω (Typ), V GS = 4.5V
- Qg (Typ) = 9.6nC, V GS = 5V
- Qgd (Typ) = 3.4nC
- C ISS (Typ) = 900pF
Applications
- DC/DC converters
DRAIN (FLANGE) GATE G SOURCE
TO-252AA
FDD SERIES
MOSFET Maximum Ratings T C=25°C unless otherwise...