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FQD6N25 Datasheet - Fairchild Semiconductor

FQD6N25 250V N-Channel MOSFET

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy .

FQD6N25 Features

* 4.4 A, 250 V, RDS(on) = 1.0 Ω (Max.) @ VGS = 10 V, ID = 2.2 A

* Low Gate Charge (Typ. 6.6 nC)

* Low Crss (Typ. 7.5 pF)

* 100% Avalanche Tested

* RoHS Compliant D D G S D-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted.  + 6

FQD6N25_FairchildSemiconductor.pdf

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Datasheet Details

Part number:

FQD6N25

Manufacturer:

Fairchild Semiconductor

File Size:

916.94 KB

Description:

250v n-channel mosfet.

FQD6N25 Distributor

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FQD6N25 FQD6N25 250V N-Channel MOSFET Fairchild Semiconductor