FQD6N25 Datasheet (Fairchild Semiconductor)

FQD6N25, 250V N-Channel MOSFET

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy

FQD6N25 Features

* 4.4 A, 250 V, RDS(on) = 1.0 Ω (Max.) @ VGS = 10 V, ID = 2.2 A

* Low Gate Charge (Typ. 6.6 nC)

* Low Crss (Typ. 7.5 pF)

* 100% Avalanche Tested

* RoHS Compliant D D G S D-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted. + 6